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Electrical Behavior of Graphene/SiO2/Silicon Material Irradiated by Electron for Field Effect Transistor (FET) Applications
Spin polarized transport in semiconductors – Challenges for Nanolithography
Spin polarized transport in semiconductors – Challenges for Nanolithography
Atomic imaging and spectroscopy of defects in low-dimensional materials Kazu Suenaga National Institute of Advanced Industrial S
Reviewing computational studies of defect formation and behaviors in carbon fiber structural units - ScienceDirect
Imaging atomic-level random walk of a point defect in graphene | Nature Communications
Direct evidence for atomic defects in graphene layers | Nature
Reviewing computational studies of defect formation and behaviors in carbon fiber structural units - ScienceDirect
Free Full-Text | Structure of Carbon Materials Explored by Local Transmission Electron Microscopy and Global Powder Diffraction Probes | HTML - C
The effect of vacancy-defects on the magnetic properties of Ising fullerene-like nano-structures: A Monte Carlo study - ScienceDirect
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Structure, bandgap and photoluminescence of fluorinated reduced graphene oxide - ScienceDirect
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Reviewing computational studies of defect formation and behaviors in carbon fiber structural units - ScienceDirect
Direct evidence for atomic defects in graphene layers | Nature
Preferential self-healing at grain boundaries in plasma-treated graphene | Nature Materials
Kazutomo SUENAGA, Prime senior researcher National Institute of Advanced Industrial Science and Technology (AIST), Nanotube Rese
Direct evidence for atomic defects in graphene layers | Nature
Electrical Behavior of Graphene/SiO2/Silicon Material Irradiated by Electron for Field Effect Transistor (FET) Applications
